Publications of the business unit Power Electronics

2020

Jahr
Year
Titel/Autor:in
Title/Author
Publikationstyp
Publication Type
2020 In-Plane Oriented Stacks of c-AlScN/Mo (110) for BAW Resonators Grown by Magnetron Sputter Epitaxy
Sundarapandian, Balasubramanian; Kessel, Matthias; Zukauskaite, Agne; Kirste, Lutz; Sun, Cheng; Ambacher, Oliver
Konferenzbeitrag
Conference Paper
2020 Novel Method for Extracting Material Constants of Epitaxial Wurtzite AlScN Films on Sapphire Using Higher Order Surface Acoustic Wave Modes
Feil, Niclas M.; Mayer, Elena; Christian, Björn; Ding, Anli; Zukauskaite, Agne; Ambacher, Oliver
Konferenzbeitrag
Conference Paper
2020 Extreme temperature modeling of AlGaN/GaN HEMTs
Albahrani, Sayed Ali; Mahajan, Dhawal; Kargazzi, Saleh; Schwantuschke, Dirk; Gneiting, Thomas; Senesky, Debbie G.; Khandelwal, Sourabh
Zeitschriftenaufsatz
Journal Article
2020 A GaN-based currrent sense amplifier for GaN HEMTs with integrated current shunts
Basler, Michael; Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Quay, Rüdiger; Kallfass, Ingmar; Ambacher, Oliver
Konferenzbeitrag
Conference Paper
2020 Determining Elastic Constants of AlScN Films on Silicon Substrates by Laser Ultrasonics
Rogall, Olga; Feil, Niclas M.; Ding, Anli; Mayer, Elena; Pupyrev, Pavel D.; Lomonosov, Alexey M.; Zukauskaite, Agne; Ambacher, Oliver; Mayer, Andreas P.
Konferenzbeitrag
Conference Paper
2020 Enhanced electromechanical coupling in SAW resonators based on sputtered non-polar Al0.77Sc0.23N (1120) thin films
Ding, Anli; Kirste, Lutz; Lu, Yuan; Driad, Rachid; Kurz, Nicolas; Lebedev, Vadim; Christoph, Tim; Feil, Niclas M.; Lozar, Roger; Metzger, Thomas; Ambacher, Oliver; Zukauskaite, Agne
Zeitschriftenaufsatz
Journal Article
2020 Fan-out wafer level packaging of GaN components for RF applications
Braun, Tanja; Nguyen, Thanh Duy; Voges, Steves; Wöhrmann, Markus; Gernhardt, Robert; Becker, Karl-Friedrich; Ndip, Ivan; Freimund, Damian; Schneider-Ramelow, Martin; Lang, Klaus-Dieter; Schwantuschke, Dirk; Ture, Erdin; Pretl, Michael; Engels, Sven
Konferenzbeitrag
Conference Paper
2020 Large-area lateral AlGaN/GaN-on-Si field-effect rectifier with low turn-on voltage
Basler, Michael; Reiner, Richard; Mönch, Stefan; Waltereit, Patrick; Quay, Rüdiger; Kallfass, Ingmar; Ambacher, Oliver
Zeitschriftenaufsatz
Journal Article
2020 First demonstration of G-band broadband GaN power amplifier MMICs operating beyond 200 GHz
Cwiklinski, Maciej; Brueckner, Peter; Leone, Stefano; Krause, Sebastian; Friesicke, Christian; Massler, Hermann; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
Conference Paper
2020 A 600V GaN-on-Si power IC with integrated gate driver, freewheeling diode, temperature and current sensors and auxiliary devices
Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Hückelheim, Jan; Meder, Dirk; Quay, Rüdiger; Ambacher, Oliver; Kallfass, Ingmar
Konferenzbeitrag
Conference Paper
2020 Non-Polar a-plane AlScN(1120) Thin Film Based SAW Resonantors with Significantly Improved Electromechanical Coupling
Ding, Anli; Driad, Rachid; Lu, Yuan; Feil, Niclas M.; Kirste, Lutz; Christoph, Tim; Ambacher, Oliver; Zukauskaite, Agne
Konferenzbeitrag
Conference Paper
2020 A 600 V p-GaN gate HEMT with intrinsic freewheeling schottky-diode in a GaN power IC with bootstrapped driver and sensors
Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Müller, Stefan; Quay, Rüdiger; Ambacher, Oliver; Kallfass, Ingmar
Konferenzbeitrag
Conference Paper
2020 Monolithic integration of inductive components in a GaN-on-Si technology
Basler, Michael; Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Quay, Rüdiger; Kallfass, Ingmar; Ambacher, Oliver
Konferenzbeitrag
Conference Paper
2020 Consistent surface-potential-based modeling of drain and gate currents in AlGaN/GaN HEMTs
Albahrani, Sayed Ali; Heuken, Lars; Schwantuschke, Dirk; Gneiting, Thomas; Burghartz, Joachim N.; Khandelwal, Sourabh
Zeitschriftenaufsatz
Journal Article
2020 A phase shifter with integrated PA MMIC for Ka-Band frequencies
Neininger, Philipp; Amirpour, Raul; John, Laurenz; Friesicke, Christian; Quay, Rüdiger; Zwick, Thomas
Konferenzbeitrag
Conference Paper
2020 Expitaxial growth of GaN/Ga2O3 and Ga2O3/GaN heterostructures for novel high electron mobility transistors
Leone, Stefano; Fornari, Roberto; Bosi, Matteo; Montedoro, Vicenzo; Kirste, Lutz; Doering, Philipp; Benkhelifa, Fouad; Prescher, Mario; Manz, Christian; Polyakov, Vladimir M.; Ambacher, Oliver
Zeitschriftenaufsatz
Journal Article
2020 Failure Analysis of 100 nm AlGaN/GaN HEMTs Stressed under On- and Off-State Stress
Kemmer, Tobias; Dammann, Michael; Baeumler, Martina; Polyakov, Vladimir M.; Brueckner, Peter; Konstanzer, Helmer; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
Conference Paper
2020 Study of Power Amplifier Harmonic Output Termination for two AlGaN/GaN Technologies at K-/Ka-Band
Samis, Stanislav; Friesicke, Christian; Lozar, Roger; Maier, Thomas; Brueckner, Peter; Quay, Rüdiger; Jacob, Arne
Konferenzbeitrag
Conference Paper
2020 A novel 32-Gb/s 5.6-Vpp digital-to-analog converter in 100 nm GaN technology for 5G signal generation
Weiß, Markus; Friesicke, Christian; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
Conference Paper
2020 Metalorganic chemical vapor phase deposition of AlScN/GaN heterostructures
Ligl, Jana; Leone, Stefano; Manz, Christian; Kirste, Lutz; Doering, Philipp; Fuchs, Theodor; Prescher, Mario; Ambacher, Oliver
Zeitschriftenaufsatz
Journal Article
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